| 摘要 |
PROBLEM TO BE SOLVED: To uniformly distribute a pressurization force when an insulating film is bonded and to enhance the reliability of the bonding operation of a semiconductor chip by a method wherein a plated groove is formed on the upper surface at the end of an inner lead and a plated layer is formed inside the groove. SOLUTION: A plated groove 15 in a prescribed depth is formed at the end part on a face opposite to the face, to which an insulating adhesive film 13 is attached, of an inner lead 12 at a semiconductor lead frame to which a semiconductor chip 10 is attached by the insulating adhesive film 13. Then, a plated layer 14 is formed inside the plated groove 15 in such a way that its surface is placed on the same plane as the opposite face of the inner lead 12. For example, it is desirable that the plated groove 15 is formed by a press working operation or a half etching operation and that the length L of the plated groove 15 is longer than that of the part to which the insulating adhesive film 13 is attached. In addition, it is desirable that the plated layer 14 is formed of gold or silver and that the thickness D of the plated layer 14 is set in a range within 70 of the thickness of the inner lead 12. |
