发明名称 Integrated circuit spring contact fabrication methods
摘要 An integrated-circuit interconnect which can be formed at the wafer level is achieved by depositing an intentionally stressed contact layer over a release layer which is subsequently removed. The removal of the release layer permits a portion of the contact layer to curve away from the surface of an integrated circuit chip. The result is a spring contact having a base portion joined to a metal member of the chip and a spring portion which is available for joining to other metal members, e.g., on a substrate or another chip. The resilience of the spring portion can also be used to position and align integrated circuit elements.
申请公布号 US5665648(A) 申请公布日期 1997.09.09
申请号 US19950577680 申请日期 1995.12.21
申请人 HUGHES ELECTRONICS 发明人 LITTLE, MICHAEL J.
分类号 H01L21/60;H01L23/48;H01L23/485;H01L23/498;H05K3/40;(IPC1-7):H01L21/60 主分类号 H01L21/60
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