| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for defining minuscule patterns smaller than lithography dimension by using intermediate layer. SOLUTION: Photoresists 211 and 212 patterned by lithography are reduced by an isotropic or partially isotropic etching to form patterned photoresists 213 and 214 with reduced trace width provided with an implanted antireflective coating which functions as an etch stop or a dummy layer. The patterns with reduced trace width 213 and 214 provide an etching mask of under coat material such as polysilicon 206, metal insulator or ferroelectric for an anisotropic etching in the next step. |
