| 摘要 |
PROBLEM TO BE SOLVED: To enable insulated-gate semiconductor devices to be integrated very high in degree of integration. SOLUTION: MIS FETs 10 and 10' are of vertical channel type and its source/drain regions 4, 4' and 5 and 5' possess LDD regions 15 and 15' respectively, and the upper part of a recessed region 35 and the lateral surface of the upside of a substrate are made to serve as a contact for the outside. An LDD structure is employed, whereby electrodes 9 and 9' can be easily provided to the source/ drain regions 4, 4' and 5 and 5', and furthermore channels 6 and 6' can be reduced in length to 0.1 to 1μm and precisely controlled in length. Furthermore, rectangular or triangular gate electrodes 18 and 18' can be given a sufficient margin for manufacture owing to an LDD structure. The gate electrodes 18 and 18' are formed adjacent to the recessed region 35 so as to be improved in mechanical strength. |
