| 摘要 |
PROBLEM TO BE SOLVED: To allow trapping of light by forming a current-reduction part by a difference in carrier concentration basing on an N-doping amount of mutual epitaxial growth regions from different crystal surfaces. SOLUTION: A first semiconductor region 61 and a second semiconductor region 62 are different in their doping amounts of N-atoms thus being Nc1 <Nc2 so that a carrier concentration, that is an acceptor concentration of the first semiconductor region 61 having a large N-atom doping amount comes to be smaller than that of the second semiconductor region 62. Accordingly, a relation between a specific resistanceρ1 of the first semiconductor region 61 and a specific resistanceρ2 of the second semiconductor region 62 comes to beρ1 >ρ2 so that the first semiconductor region 61 acts as a current narrowing part region so as to be formed being limited on a groove 3 and the semiconductor region 62 whose top parts are coincided to be narrow becomes a current- concentrated region thus allowing light trapping.
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