| 摘要 |
PROBLEM TO BE SOLVED: To prevent the increase in the manufacturing cost by thinning the extended part of the value of the specific range of a gate insulating film pattern without masking with a gate electrode pattern, and thinning ion impurity. SOLUTION: The gate pattern 5 of Cr to become a gate electrode is formed by photolithography. After a gate insulating film is etched without releasing photoresist, a substrate is again dipped in etchant of Cr, and etching is proceeded from the side of the pattern 5. The end face of the pattern 5 is formed 0.1 to 2.0μm at the inside from the gate insulating film. After the photoresist on the Cr is removed, photoresist is deposited as the mask layer 6 covering the part to become n-channel TFT.
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