| 摘要 |
PROBLEM TO BE SOLVED: To obtain a titanium oxide film having a rutile type structure by forming a chemical vapor deposition(CVD) film or a physical vapor deposition(PVD) film on an oxide film having the rutile type crystal structure. SOLUTION: This titanium oxide film comprises a CVD film or a PVD film formed on an oxide film having a rutile type crystal structure. An n-Si substrate 1 obtained by carrying out, e.g. heat treatment and forming an SiO2 film 2 having 0.2μm thickness on the surface, then forming a Ti film 3 having 0.1μm thickness in order to prevent a reaction with an electrode (a Pt film 4) formed thereafter and having (100) face as a principal plane is prepared. The Pt film 4 having 0.3μm thickness is formed on the Ti film 3 according to a sputtering method and a tin oxide film 5 having 0.1μm thickness as a buffer layer is then formed on the Pt film 4 by the CVD method. A titanium oxide film 6 having 0.3μm thickness is further formed on the tin oxide film 5 according to the CVD method. Thereby, a rutile type oxide without imparing the electrostatic capacity when formed into a thin-film capacitor is obtained.
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