| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor device which restrains a back gate effect and whose pulse responsivity with reference to a change in a mark ratio is improved by a method wherein a defect layer is formed on the rear of a semiinsulating substrate by an ion implantation method. SOLUTION: An n-type GaAs layer 2 which is formed by the ion implantation of Si and by an activation heat treatment after that is formed on the surface of a semiinsulating GaAs substrate 1, and a source electrode 6, a gate electrode 7 and a drain electrode 8 are formed on it. Respective elements are isolated by an element isolation layer 3 formed by the implantation of boron ions B<+> . After the elements have been formed, the rear of the semiinsulating GaAs substrate 1 is polished, boron ions B<+> are implanted into the polished whole face, and a rear defect layer 4 is formed. In addition, a Ti-Au rear electrode 5 is formed on the rear surface of the rear defect layer 4. Therefor, it is possible to obtain a compound semiconductor device in which an FET channel is not affected, whose productivity is not lowered and which can suppress a back gate effect. |
