| 摘要 |
PROBLEM TO BE SOLVED: To easily form a Si or Ge semiconductor film having a large area by selecting a semiconductor material from among compds. expressed by specified formulae. SOLUTION: A semiconductor material is selected from among compds. given by formulae I, II (M is Si or Ge, R1 selected among H and alkyls having 2C or more and beta H), III, IV (X is halogen atom, n is 4 or higher integer, a is 1 or 1) V (R2 is substituted group given by VII nonsubstituted alkyl group, R3 is H atom, 1-15C substituted group, R4 is 1-15C substituted group) VI (R5 is 1-15C substituted group) to form a semiconductor thin film. This soln. is coated and thermally decomposed to form a Si film having a large area. |
