| 摘要 |
A BiCMOS semiconductor device comprising a substrate, a vertical bipolar transistor provided on the substrate and having a first conductive base terminal electrode formed in a portion of a first semiconductor film provided on the substrate, a second conductive semiconductor terminal electrode formed in a second semiconductor film provided through an insulating layer on the first semiconductor film, the first and second conductive electrodes being disposed such that portions thereof overlap each other, and an LDD (lightly doped drain)-type MOS transistor provided on the substrate and having a gate electrode formed in a portion of said first semiconductor film and a gate side wall formed on a side wall of said gate electrode, wherein the insulating layer is caused to exist selectively in a region in which the first and second conductive electrodes are overlapped, and constitutes at least a portion of the gate side wall.
|
