| 摘要 |
PCT No. PCT/EP95/01300 Sec. 371 Date Nov. 5, 1995 Sec. 102(e) Date Nov. 5, 1995 PCT Filed Apr. 8, 1995 PCT Pub. No. WO95/28743 PCT Pub. Date Oct. 26, 1995It is suggested for a metal-semiconductor diode that the depletion zone layer be grown epitaxially from deformed InxGa1-xAs with an indium content x increasing in the direction of the metal contact and/or that a diode area be delimited by surrounding insulation regions in a planar design consisting of a flat layer sequence and that the metal contact be provided on the surface of the layer sequence. Corresponding advantageous manufacturing processes are described.
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