SEMICONDUCTOR EPITAXIAL GROWTH

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a quantum fine line structure. SOLUTION: An Si substrate is formed thereon with a slant substrate having steps and heated to concentrate single-atom steps on a plurality of step edges. Si or mixed crystal of family-IV semiconductor containing Si having a band gap energy smaller than that of the Si substrate is formed on the step edges at step-bunched locations to form fine lines. The step edges are them buried with an Si layer, whereby quantum fine structure is self-formed at the step edges.