| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a ceramic capacitor narrow in a distribution of electric characteristics such as dielectric constant, dielectric loss, etc., small in the coefficient of variation, excellent in characteristics of insulative resistance and insulative breakdown voltage, high in a manufacturing yield of a step, and excellent in stabilization of characteristics and reliability. SOLUTION: In a diffusion agent applying step, on a face of a semiconductor porcelain having semiconducted crystal particles of a mean particle size 20 to 150μm and specific resistance at 25 deg.C of 30Ωcm or less, diffusion agent of 0.1 to 10.0wt% obtained when converted into a metal oxide with respect to a weight of the semiconductor porcelain is applied. Further, in a grain boundary insulation layer forming step, the semiconductor porcelain to which the diffusion agent is applied in the diffusion agent applying step is heated and a grain boundary insulation layer 3 having a thickness of 1.0 to 30μm is formed in a grain boundary part between the semiconducted crystal particles 2.
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