| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture a semiconductor device of high transistor characteristics by a method wherein high-frequency transistors are formed by a master slice method. SOLUTION: A semiconductor device is equipped with transistors formed on a semiconductor chip 1 by a master slice method, wherein a transistor of minimum scale selected out of transistors manufactured by a master slice method is arranged as a main transistor cell 2 at the center of the semiconductor chip 1, and auxiliary transistor cells 3 and 4 are arranged symmetrically with respect to the main transistor cell 2. |
