| 摘要 |
PROBLEM TO BE SOLVED: To enable a plasma for use in material processing to be evaluated by achieving an analyzing element capable of analyzing a density of particles and energy at high accuracy. SOLUTION: Bottom conductor films 102 for detection are formed on a substrate 101 covered with an insulating film. Furthermore, there are provided an SiO2 insulating film, conductor films 103, 104 for applying an analyzing voltage and an uppermost conductor film 105. The uppermost conductor film 105 is subjected to a process of forming contact portions 106 to the films 102-104. Fine holes 107 are bored at intervals in the order ofμm in the three square regions. The bottom conductor film 102 is exposed to the bottoms of the fine holes 107. The analyzing element such constituted as described above is placed on a base table inside a material processing chamber using a plasma. Voltage applying means is connected to the conductor films 103, 104 with respect to the contact portions 106, and current detecting means is connected to the bottom conduction film 102. Subsequently, the plasma is ignited; meanwhile, a high frequency voltage is applied to the base table so as to apply the high frequency voltage to the entire analyzing element. The voltage is controlled in such a manner that only particles are incident into the fine holes 107, thus analyzing a density of the charged particles and energy.
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