发明名称 |
Method of manufacturing single-wafer tunneling sensor |
摘要 |
A tunneling tip sensor and a method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.
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申请公布号 |
US5665253(A) |
申请公布日期 |
1997.09.09 |
申请号 |
US19950456211 |
申请日期 |
1995.05.31 |
申请人 |
HUGHES ELECTRONICS |
发明人 |
KUBENA, RANDALL L.;ATKINSON, GARY M. |
分类号 |
G01L1/18;G01C19/56;G01L9/04;G01P15/08;G01P15/13;G01Q60/16;G01Q70/16;H01L29/84;(IPC1-7):H01L21/027;H01J37/244 |
主分类号 |
G01L1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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