| 摘要 |
PROBLEM TO BE SOLVED: To improve outgoing emission efficiency by forming a space contg. no crystal in a region in a lower part of an upper electrode. SOLUTION: A circular space 80 is formed which is vacuum or filled with an atmosphere gas at bonding and contains no III-V compd. semiconductor crystal. A light emitted toward a GaAs substrate 1 is reflected to the surface of a light emitting diode chip by a RBR 3. A light emitted toward a GaP substrate 8 is reflected to the surface of this chip because of the refractive index difference between the space and substrate 8 in addition to DBR 3. Among lights emitted from a light emitting layer, the light from a cap layer 7 to the space 80 is transmitted about 70% and the transmitted light is reflected about 30% and the transmission and reflection are repeated. Since no absorption layer exists, the light is almost propagated to a second transparent semiconductor substrate 8 (GaP). Thus, the outgoing emission efficiency is improved. |
