| 摘要 |
PROBLEM TO BE SOLVED: To eliminate reduction of light emission intensity due to reduction of an area of a connected portion between a semiconductor layer and an electrode, to eliminate the need for enlarging a driving voltage and to eliminate local current flow inside an island-like semiconductor layer and light emission irregularity. SOLUTION: An island-like semiconductor layer which shows one conductivity type is provided on a semiconductor substrate 1, a second semiconductor layer 3 which shows a reverse conductivity type is provided to laminate on a first semiconductor layer 2 to expose one end part of the semiconductor layer and a first electrode 4 is provided to cover an exposed part of the first semiconductor layer 2 from an upper surface to a side surface thereof. Furthermore, the first electrode 4 and the first semiconductor layer 2 are connected all over or almost all over an upper surface part of the first semiconductor layer 2 of a part wherein the first electrode 4 and the first semiconductor layer 2 confront each other, second electrodes 5a, 5b are provided to cover the second semiconductor layer 3 from an upper surface to a side surface thereof, and the second electrodes 5a, 5b and the second semiconductor layer 3 are connected all over or almost all over an upper surface part of the second semiconductor layer 3 of a part wherein the second electrodes 5a, 5b and the second semiconductor layer 3 confront each other. |
