| 摘要 |
PROBLEM TO BE SOLVED: To increase uniformity of annealing for a large area semiconductor film by using a linear laser beam. SOLUTION: Homogenizers, which control an irradiating energy density in the longitudinal direction of a laser beam which is worked to a linear and irradiates a face to be irradiated, are arranged with two each as shown by 12, 12. Further, the homogenizer, which controls an irradiating energy density in the width direction of linear laser beam is set with one each as shown by 11. By this method, uniformity of laser beam can be obtained with the minimum number of homogenizers. |
