| 摘要 |
<p>PROBLEM TO BE SOLVED: To hold a semiconductor wafer with a uniform attractive force by forming electrodes having specified thickness and length on the surface of a ceramic base and covering the electrodes with an aluminum nitride film in a specified thickness range to form a holding face having a high flatness accuracy. SOLUTION: A ceramic base 1 contg. a resistance heater 7 and two-pole conductor layer 6 buried therein has electrodes 2 of 0.2mm or more thick and 5cm max. long each, and the electrodes 2 are covered with an aluminum nitride film 3 of 0.01-0.5mm thick to form a holding face 4. Since the electrode 2 on the surface of the base 1 is 5cm max. long, the base 1 little warps and the holding face 4 can be finished at a superior flatness while the attraction dispersion is little and the wafer 10 can be held at a high accuracy. It is possible to generate a plasma at a contst. plasma density between a metal plate and surface 2.</p> |
