| 摘要 |
A light-emitting diode comprises a first layer of Si-doped N-type Ga1-xAlxAs, a second layer of Si-doped P-type Ga1-yAlyAs and a third layer of P-type Ga1-zAlzAs, in that order, in which the first and third layers have a higher Al concentration than the second layer, an Al concentration in the second layer decreases going from a first layer side to a third layer side, an Al concentration in a portion of the second layer in contact with the third layer is higher than an Al concentration value in a portion of the second layer in contact with the first layer minus 0.06, the second layer is formed to a thickness of approximately 8 mu m to 50 mu m, and light emission is via the first layer.
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