Semiconductor memory device having a redundancy function suppressible of leakage current from a defective memory cell

摘要

In a reading/writing operation, a bit line pair group including a defective memory cell is replaced with a spare bit line pair group. Supply of a precharge potential to a bit line equalize circuit and a power supply interconnection of a sense amplifier is effected by an interconnection VBLn connected to ground for every bit line pair group. In the replacement of the bit line pair group, supply of a precharge potential to the bit line pair group is cut by a fuse element.