发明名称 SEMICONDUCTOR MATERIAL HEAT PROCESSOR
摘要 <p>PROBLEM TO BE SOLVED: To improve yield by inserting a pedestal of heat-resistant synthetic resin between the lower surface of a carrier and the upper surface of a porous support plate in a furnace so as to prevent occurrence of metal powder between the carrier and the porous support plate in the furnace. SOLUTION: A carrier 1 containing a plurality of semiconductor wafers W comprises a carrier main body 2, a metal side plate 3 and a stay member 4 both connected to the carrier main body 2. The carrier 1 is placed on a metal porous support plate 6 in a furnace so as to heat the semiconductor wafers W. A pedestal member 8c of heat-resistant synthetic resin is inserted between the lower surface of the carrier 1 and the upper surface of the porous support plate 6. This insertion of the pedestal member 8c, the lower surface of the carrier 1 is in direct contact with the upper surface of the support plate 6, which avoids scratching the carrier 1 on the support plate 6. This reliably prevents occurrence of metal powder when placing the carrier 1 on the upper surface of the support plate 6 or removing the carrier 1.</p>
申请公布号 JPH09232408(A) 申请公布日期 1997.09.05
申请号 JP19960033744 申请日期 1996.02.21
申请人 ROHM CO LTD 发明人 TAGASHIRA FUMIAKI
分类号 G03F7/40;C23C14/50;H01L21/027;H01L21/31;H01L21/324;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 G03F7/40
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