| 摘要 |
PROBLEM TO BE SOLVED: To prevent a multiple exposure region from being generated in the boundary part between adjacent exposure regions on a wafer even when a step-and-scan exposure operation is performed by a method wherein an X-ray reflectance in regions other than a pattern transfer region is made lower than an X-ray reflectance in the pattern transfer region. SOLUTION: Molybdenum films and silicon films are laminated alternately in respective film thicknesses on a support substrate 31 for a reflection-type X-ray mask by using an RF magnetron sputtering method, and a multilayer film 32 for X-ray reflection is obtained. At this time, the film formation region of the multilayer film 32 is used as a transfer region in an X-ray exposure operation, its outside part is covered with a mask so as to become a region 200mm square at the inside of the mask support substrate 31, and the X-ray reflection multilayer film 32 is formed only in a pattern transfer region. Then, a tungsten X-ray absorber pattern 33 in a prescribed film thickness and an alignment mark are formed on the multilayer film 32, and an X-ray reflectance in regions other than the pattern transfer region on the X-ray reflection multilayer film 32 is made lower than an X-ray reflectance in the pattern transfer region. |
