| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the leak current due to generation of the damage on the inside wall of a trench. SOLUTION: An N<-> type epitaxial layer 12 is formed on an N<+> type silicon substrate 11. A high density P<+> base diffusion layer 2 is formed on the prescribed region of the epitaxial layer 12. Trenches 3, penetrating to the epitaxial layer 12 from the surface of the base diffusion layer 2, are formed. An N<-> selective epitaxial layer 4 is formed in the trenches 3. A Schottky metal 5 is formed on the surface of the base diffusion layer 2 and the epitaxial layer 12 including the selective epitaxial layer 4. The surface region 6 of each selective epitaxial layer 4, which is filled in the two trenches 3, becomes a diode working region. |
