| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist material which prevents a side-etching operation from being generated locally by a method wherein, while a resist is being dry- etched, the resist generates at least one out of silicon halogenide, aluminum halogenide, carbon monoxide and the compound of elements other than oxygen. SOLUTION: A resist material contains at least an organic silicon compound and an organic halogenide, and it generates silicon halogenide in a dry etching operation. As the organic silicon compound, a compound which contains an Si-Si bond is preferable. For example, polydimethylsilane, polysilanes such as poly(methyldodecylsilane), poly(p-disilanylenephenylene), dimethyltetraphenyldisilane or the like can be enumerated. As the organic halogenide, hexachloroethane, pentabromophenol, 2,4,6-tris(trichloromethyl)-1,3,5- triazine or the like can be enumerated. |
