| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern applicable to a sub-half micron process by suppressing variation in the dimensions of resist pattern. SOLUTION: A resist is applied to a wafer, followed by a baking process, and the obtained wafer is stored in an atmosphere with a humidity of 80% or more. Then a photo-exposure of resist and development are performed so that a resist pattern is formed. The storing temp. should be room temp. and the humidity should preferably be over 90%. With this storage, the water content of the resist can be increased quickly to the region where it does not commit itself to the dimensional variation of the resist, and it is possible to stabilize the resist dimensions in a short time and suppress dimensional variation thereafter. |
