| 摘要 |
PROBLEM TO BE SOLVED: To improve an open end voltage and a film formation speed without lowering a short-circuit photocurrent and a drive factor and to enhance the conversion efficiency of a photoelectric conversion element by forming a fine crystalline silicon semiconductor thin film which is composed of an amorphous phase containing a crystallite which contains a phase gathered and constituted to be pillar-shaped or cone-shaped. SOLUTION: A fine crystalline silicon thin film is composed of amorphous phases 20 containing crystallites 30, and the crystallites 30 contain phases 40 which are gathered and constituted to be pillar-shaped or cone-shaped. It is not required that the pillar-shaped or cone-shaped fine crystallites gathered phases 40 are in a complete pillar-shaped state or in a complete cone-shaped state, and they may have a shape which is synthesized, composed or mixed. In the amorphous phases inside the thin film, a single crystallite may be contained in them in a dispersed state. At this time, the pillar-shaped or cone- shaped phases 40 in which the crystallites 30 in a crystallite size of 2 to 1000nm, more preferably a crystallite size of 5 to 80nm, are gathered and constituted and the amorphous phases 20 in about 20% are required inside the fine crystallite silicon thin film. |
