| 摘要 |
PROBLEM TO BE SOLVED: To prevent the peeling of a polyimide film formed on a silicon nitride film which is to be caused by heat treatment, by forming a photosensitive polyamide acid film, in the state that the contact angle of the silicon nitride film formed on a semiconductor substrate satisfies a specified condition. SOLUTION: After a bonding pad 2 is formed on a silicon substrate 1, a silicon nitride film 3 is formed on the whole surface. The contact angleθof the silicon nitride film 3 is measured by using pure water as a reagent. When the contact angleθsatisfies the condition 20 deg.<=θ<=70 deg., a photosensitive polyamide acid film 4A is immediately formed. Whenθ<20 deg. orθ>70 deg., the surface of the silicon nitride film 3 is etched by about 5nm by a sputtering method using inert gas like Ar gas, or the silicon nitride film 3 is again thinnly grown. Thereby the condition that the contact angleθis 20 deg.<=θ<=70 deg. is satisfied, and then the film 4A is formed. As a result, when a polyimide film 4B is formed by heat-treating the film 4A, the film 4b is not peeled from the silicon nitride film 3, because adhesion is improved.
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