| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reflection type liquid crystal panel having a sure light shielding structure to MOS transistors by devising a reflection electrode structure. SOLUTION: A low reflection layer 150a, a high melting metallic layer 150b and a high reflection layer 150c are formed as reflection electrode layers 150 on a lower electrode substrate P1. Grooves G are formed over the three layers of these reflection electrode layers 150 and the respective reflection electrodes H are segmented and formed to a matrix form. These reflection electrodes H are respectively connected to plural MOS transistors (90a to 90d) formed in the matrix form on the one main surface 61 of a semiconductor substrate 60 via interlayer insulating films. An upper electrode substrate P2 is disposed via high-polymer dispersed liquid crystals P3 to face the electrode substrate P1.</p> |
