| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a processing device of continuously cleaning a semiconductor substrate and forming a file is low-priced, a processing step is reduced, and crytical defects of the semiconductor substrate are decreased. SOLUTION: A semiconductor substrate is conveyed into a furnace filled with an argon gas atmosphere (step 2). Next, argon gas, nitrogen gas or a mixed gas of argon gas and nitrogen gas is introduced into the furnace (step 3). Next, a face of the semiconductor substrate is cleaned in an atmosphere of argon gas, nitrogen gas, or mixed gas of argon gas and nitrogen gas, and a desired film is formed on the semiconductor substrate of which a face is cleaned.
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