MULTI-LAYER WIRING SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD,申请号JP19960041143-传众专利搜索

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发明名称	MULTI-LAYER WIRING SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要
申请公布号	JPH09232429(A)	申请公布日期	1997.09.05
申请号	JP19960041143	申请日期	1996.02.28
申请人	NEC CORP	发明人	GOTO YOSHIRO
分类号	H01L21/285;H01L21/28;H01L21/302;H01L21/3065;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/306	主分类号	H01L21/285
代理机构		代理人
主权项
地址

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