| 摘要 |
PROBLEM TO BE SOLVED: To enable a specific ratio between a coupling capacitance and a memory cell capacitance to be secured constantly by forming a coupling capacitor and a memory cell capacitor by the same process. SOLUTION: Bit line pair (BL, BLB) are splitted into a plurality of splitted bit line pairs (BL1, BL1B; BL2, BL2B) so as to form coupling capacitor with mutually adjacent splitted bit lines tucked up. A memory cell containing a MOSFET, a capacitor lower electrode 10, a capacitor insulating film 11 and a capacitor upper electrode 12 is formed in a memory cell array part 2. A coupling capacitor composed of a plurality of unit capacitors formed in the same process as that of the cell capacitors series connected is connected between the splitted bit line 15a (BL1) and the splitted bit line (BL2B) in the coupling capacitor part 1. Likewise, the same coupling capacitor is formed between the splitted bit lines BL1B and BL2. |
