| 摘要 |
PROBLEM TO BE SOLVED: To contribute to the stable operation of a ferroelectrics memory capable of correcting the central slippage in ferroelectric hysteresis while using a ferroelectrics thin film exhibiting the ferroelectricity by epitaxial effect. SOLUTION: In the manufacturing method of ferroelectrics memory wherein an epitaxial lower part electrode 23 made of Pt is formed on a substrate 11 through the intermediary of a TiN barrier metal 22 in order to produce a ferroelectrics capacitor on the substrate 11 and then a BST thin film 24 as a capacitor insulating film is epitaxially grown on said electrode 23 and furthermore, an upper part electrode 25 made of Pt is formed on said thin film 24, after the formation of the lower part electrode 23, the BST thin film 24 and the upper part electrode 25, the ferroelectrics memory is inverse imprinted for 14 minutes at 450 deg.C while impressing respective electrodes 23, 25 with voltage of 12V. |
