| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a semiconductor memory device that can perform an efficient redundancy. SOLUTION: This is a semiconductor memory device wherein each of main bit lines B1 -Bm wired in a row is connected to a plurality of redundant sub-bit line blocks S11 -Snm . The device has redundant main bit lines b1 -bk connected to a plurality of redundant sub-bit line blocks s11 -snk , and failure address- recording parts 7, 7a for recording addresses of failure sub bit line blocks. When the failure sub bit line block exists, the failure sub-bit line block is replaced with the redundant sub bit line block in a direction of an extension line of the same word line.</p> |
