发明名称 FERROELECTRIC MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To relax the effect of the polarization reduction (relaxation) of a ferroelectric capacitor, and to carry out a low-voltage operation by bringing an electric field and polarization applied among each electrode of reference cells to zero. SOLUTION: The size of reference cells and a main body cell is equalized and the same operation is also conducted at the potential of the plate electrodes of each cell at the time of read by bringing an electric field applied among each electrode of the reference cells in the device to zero and polarization to zero under a standby state. Accordingly, the effects of the relaxation and imprint of a ferroelectric capacitor are eliminated, and lower-voltage operation is conducted.
申请公布号 JPH09231776(A) 申请公布日期 1997.09.05
申请号 JP19960042579 申请日期 1996.02.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIRANO HIROSHIGE
分类号 G11C14/00;G11C11/22;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L29/788;H01L29/792 主分类号 G11C14/00
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