发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To realize a technique capable of mass-producing and supplying a capacitor incorporating IC by using a capacitor of a structure having a smaller surface area than that of an IC chip and having quite a small thickness. SOLUTION: A flexible capacitor (FC) 53 consists of an Si substrate 54 having a thickness of 50μm, a support substrate of an SiO2 film 55 having a thickness of 1μm, an MIM type capacitor and electrode pads 59a, 59b. The capacitor and the electrode pads 59a, 59b are provided below the substrates 54 and 55. The MIM type capacitor consists of a Pt/Ti layer 56, a BST (mixed crystal of BaTiO3 and SrTiO3 ) layer 57 and an Au/Ti layer 58. An anisotropically conductive film 60 is made of adhesive resin containing conductive particles such as Au. The film 60 is plastically deformed by thermocompression, electrically connects the electrode pads 59a, 59b facing the film 60 thanks to the conductive particles 61a, 61b and bonds the remaining portion with insulating resin 62. Since the capacitor is mounted on an IC chip, it is possible to contribute to improving the miniaturization and performance of an electronic apparatus and to handle the IC chip using the conventional assembly technique.
申请公布号 JPH09232504(A) 申请公布日期 1997.09.05
申请号 JP19960034577 申请日期 1996.02.22
申请人 HITACHI LTD 发明人 MIYAZAKI MASARU;USAMI MITSUO
分类号 H01L25/00 主分类号 H01L25/00
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