| 摘要 |
<p>PROBLEM TO BE SOLVED: To minimize occurrence of double plasma and process failures due to polymer material accumulated on a stage by providing a ring slope surface, inclined at a predetermined slope angle with respect to a main surface, extended between the outer perimeter of the main surface and the inner perimeter of an outmost side ring surface, within a predetermined interval. SOLUTION: A main surface 72 is formed on the upper surface of a stage 70. The main surface 72 is flat in a horizontal direction for close contact with a wafer 50 placed thereon. Further, an outmost side ring surface 76 is formed in a predetermined interval between the outmost side of the upper surface of the stage 70 and the main surface 72. The outmost side ring surface 76 is extended parallel to the main surface 12 at a position lower than the main surface 72 by a predetermined depth. Further, a ring slope surface 74 is extended between the outer perimeter of the main surface 72 and the inner perimeter of the outmost side ring surface 76, within a predetermined interval between the main surface 72 and the outmost side ring surface 76. The ring slope surface 74 is inclined at a predetermined slope angle with respect to the main surface 72. This prevents occurrence of double plasma between the wafer 50 and the stage 70 when the wafer 50 is loaded on the stage 70.</p> |
