| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device posing no problems such as a released metallic film, etc., as well as capable of easily forming the sidewall of a layered electrode made of a high melting point metal. SOLUTION: A titanium nitride film 16 as a barrier metal, a tungsten film 17 as an electrode main body, another titanium nitride film 22 as an etching back stopper are formed on an interlayer insulating film 13. Next, after etching away for patterning the stopper titanium nitride film 22, the electrode main body tungsten film 17 leaving the barrier metallic titanium film 16 intact another tungsten film 18 is formed on the whole surface. Successively, the whole surface is etched back leaving the sidewall tungsten film 18 as a sidewall and then the barrier metallic titanium nitride film 16 and the stopper titanium nitride film 22 are simultaneously etched away. |
