| 摘要 |
PROBLEM TO BE SOLVED: To obtain a polishing and working method whose working efficiency is increased without generating working damage and in which the operating expenses of a polishing treatment are reduced by a method wherein a whetstone which is composed of abrasive grains and of a substance used to bond and hold the abrasive grains is used and a working operation is performed while a polishing liquid containing abrasive grains whose kind is different from that of the abrasive grains constituting the whetstone is being supplied. SOLUTION: A whetstone 35 is fixed onto a surface plate 12 so as to be rotated. A wafer 1 is installed on the whetstone 35 in such a way that it is pressed to a face, to be worked, on which a recessed and protrusing pattern is formed, and it is held by a wafer holder 14. When an oxide film on the silicon wafer on which a circuit pattern is formed is polished, e.g. a soft porous whetstone in which cerium oxide particles in an average particle size of about 1μm are bonded by an organic resin material such as a phenolic resin or the like and whose Young's modulus is at about 100kg/mm<2> is used as the whetstone 35. At this time, even with the whetstone only, the oxide film on the wafer can be polished so as to be flattened, but colloidal silica is used as s slurry in order to obtain its higher working efficiency. |
