| 摘要 |
PROBLEM TO BE SOLVED: To obtain a light emitting element using long life II-VI compound semiconductor in low threshold value current density by successively laminating an active layer of the first conductivity type clad layer, the strain compensation structure single quantum well structure held by barrier layers and the second conductivity type clad layer. SOLUTION: Three kinds of buffer layers, a p-type ZnSe/ZnTeMQW layer and a contact layer wherein a barrier layer made of an n-type ZnMgSSe clad layer, an n-type ZnSSe optical waveguide layer, a strain compensation single quantum well structured active layer, a p-type ZnSSe optical waveguide layer, a p-type ZnSSe clad layer, a p-type ZnSSe layer, a contact layer, a p-type ZnSe and a well layer made of a p-type ZnTe are altenately laminated are successively laminated. With such constitution, in the concrete, within the structure, Zn0.73 Cd0.27 Se layer as the single quantum well layer (light emitting layer) is held by Zn0.81 S0.19 Se layers as the barrier layers. |
