发明名称 CONTROL MECHANISMS FOR DOSIMETRY CONTROL IN ION IMPLANTATION SYSTEMS
摘要 <p>A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and an ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.</p>
申请公布号 WO1997032335(A2) 申请公布日期 1997.09.04
申请号 US1997002412 申请日期 1997.02.14
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