| 摘要 |
PROBLEM TO BE SOLVED: To provide a white LED of high purity and reliability. SOLUTION: An GaN buffer layer 2, an N-type Al0.1 Ga0.9 N clad layer 3, an N-type GaN guide layer 4, an undoped In0.26 Ga0.74 N active layer 5, an undoped GaN barrier layer 6, an undoped In0.46 Ga0.54 N active layer 7, an undoped GaN barrier layer 8, an undoped In0.89 Ga0.11 N active layer 9, a P-type GaN guide layer 10, a P-type Al0.1 Ga0.9 N clad layer 11, a P-type GaN contact layer 12, and a P-type current diffusion layer 13 are successively laminated on a sapphire substrate 1. The three active layers different from each other in band gap energy are provided. Light rays emitted from the active layers are light of three primary colors, red light, green light, and blue light ranging in this sequence from the substrate 1, and only white light is emitted from the surface of an LED chip. In result, a white LED of high purity and reliability can be realized. |
