LASER MATERIAL

摘要

The invention pertains to quantum electronics, specifically to materials for laser technology, and is intended for use in solid-state lasers with a generation wavelength of between 2.8 and 3.1 mu m. The technical problem addressed by the invention is that of raising the amplification coefficient of the laser material, lowering the stimulation threshold of generation, increasing generation efficiency and widening the available range of industrial generating systems with continuously variable emission wavelengths in the range 2.8-3.1 mu m, including those operating in short-pulse generation and amplification modes. In specific embodiments, the aim of the invention is also to prevent fissures forming in the crystal, reduce scattering, improve emission stability and reduce passive absorption. The laser material has a garnet structure and is characterised in that it contains between 0.025 and 2.95 f. units holmium and in addition at least one of the following elements: Li, Be, B, Na, Ca, Mg, Si, K, Ti, V, Mn, Fe, Co, Ni, Cu, Zn, Ge, Rb, Sr, Zr, Nb, Mo, W, Ta, Hf, Bi, in quantities of between 1 X 10<17> cm<-3> and 5 X 10<20> cm<-3>.