| 摘要 |
PURPOSE:To obtain the title jig having an uniform thermal expansion coefficient without cracking and peeling, by preparing a graphite substrate embedding SiC under specific conditions and forming an SiC film on the surface of the substrate by a chemical vapor deposition(CVD) method using SiC distributing on the surface thereof as nuclei. CONSTITUTION:A compound raw material, containing silicon, such as metallic silicone, Si3N4, silicon oxide compound or silane compound (e.g., polycarbosilane), in graphite powder so as to produce 0.5-15wt.% SiC based on graphite and prepared by removing group III and V elements of the periodic table, as necessary, is blended with a binder and then formed into the aimed shape. The resultant compact is subsequently heated and reacted at 1300-2200 deg.C in an inert atmosphere or atmosphere under reduced pressure (e.g., <=1Torr) to provide a graphite substrate embedding the SiC. The obtained substrate is then washed to remove impurities and an SiC film is formed by vapor deposition using the SiC distributed on the surface as nuclei by a conventional CVD method. |
