HANDOTAISOCHINOSAKUSEIHOHO

摘要

PURPOSE:To prevent electron/hole recombination centers from increasing and improve photoelectric efficiency by promoting crystallization of a non-single crystal semiconductor layer by optical annealing on an combining interface between a P-type or N-type semiconductor layer and an I-type semiconductor layer. CONSTITUTION:A superhigh-pressure mercury lamp 54 generates 300nm or 450nm short wavelength light and cuts 500nm or longer wavelength light by a filter 59 and the light is collected by a quartz lens 55. A shutter 56 is arranged between the quartz lens 55 and a substrate 60 to be irradiated. Linear ultraviolet rays 57 collected in a 100mum or 2mm wide line is focused on the surface of the substrate 60 and the substrate 60 is shifted on an X table 61 at a fixed speed. Most of the collected linear ultraviolet rays 57 are absorbed by non-single crystal semiconductor by 1000Angstrom or less in depth and an extremely thin area from the surface is crystallized. Since the crystallinity of the non-single crystal semiconductor is promoted by optical annealing, the light absorbing coefficient is reduced by the crystallization.