发明名称 |
Method of manufacturing a GaP light emitting element |
摘要 |
<p>A GaP light emitting element substrate comprising an n-type GaP layer (12), a nitrogen-doped n-type GaP layer (13) and a p-type GaP layer (14) layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) (11) on an n-type GaP single crystal substrate (10), wherein the sulfur (S) concentration in said n-type GaP buffer layer (11) is made to be 5 x 10<1><6> [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) (11) is formed on an n-type GaP single crystal substrate (10) to prepare a multi-layer GaP substrate, then an n-type GaP layer (12), a nitrogen doped n-type GaP layer (13) and a p-type GaP layer (14) are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer (11) is made to be 5 x 10<1><6> [atoms/cc] or less when the multi-layer GaP substrate is prepared. <IMAGE></p> |
申请公布号 |
EP0590649(B1) |
申请公布日期 |
1997.09.03 |
申请号 |
EP19930115751 |
申请日期 |
1993.09.29 |
申请人 |
SHIN-ETSU HANDOTAI KABUSHIKI KAISHA |
发明人 |
OOTAKI, TOSHIO;NAKAMURA, AKIO;TAMURA, YUUKI;YANAGISAWA, MUNEHISA;HIGUCHI, SUSUMU |
分类号 |
H01L33/02;H01L33/12;H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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