| 摘要 |
PURPOSE:To obtain a light emitting diode having high intensity in a simple structure by adding Si and p-type dopant in Ga, Al and GaAs material solution as dopants to form a GaAlAs epitaxial layer of a n-type layer and a p-type layer. CONSTITUTION:In a light emitting diode in which a GaAlAs layer on a GaAs substrate is liquid epitaxially grown to form a n-type layer and a p-type layer, Si and p-type dopant are added into Ga, Al and GaAs material solution as dopants to form a n-type layer and a p-type layer. For example, a Si-doped GaAs substrate is set on a slide board, 50g of Ga, 8g of GaAs, 170mg of Al, 60mg of Si and 400mg of Zn are set in a material solution reservoir, the board is set in a quartz reaction tube, it is substituted for hydrogen gas, and it is then heated to 950 deg.C. After 3 hours from when it is heated, the substrate is gradually cooled in contact with the growing material solution at 0.1 deg.C/min of cooling speed. When it becomes 700 deg.C, the growth is finished, and epitaxial layers of the n-type layer and the p-type layer are formed. |
