| 摘要 |
<p>A cache memory having rows of memory cells, each row having at least first and second blocks of memory cells. Each memory cell stores a data signal, has at least one word line input, and at least one bit line input/output. A word line connects the word line inputs of at least first, second, third, and fourth memory cells in a row of the cache memory. The first and third memory cells are contained in the first block, while the second and fourth memory cells are contained in the second block. First and second sense amplifiers or write drivers are provided for reading data from or writing data to memory cells. First and second switches having control inputs connect the bit line inputs/outputs of the first and second memory cells, respectively, to the first sense amplifier/write driver. Third and fourth switches having control inputs switchably connect the bit line inputs/outputs of the third and fourth memory cells, respectively, to the second sense amplifier/write driver. The control inputs of the first, second, third, and fourth switches are capable of being independently actuated. Selection means, such as an address decoder, independently actuate either the first and third switches to connect memory cells only in the first block to the sense amplifiers, or the first and fourth switches to connect memory cells in both the first and second blocks to the sense amplifiers. <IMAGE></p> |
