Magnetoresistive sensor having a bias field applied at approximately 56 DEG

摘要

PCT No. PCT/JP95/01674 Sec. 371 Date Aug. 5, 1996 Sec. 102(e) Date Aug. 5, 1996 PCT Filed Aug. 23, 1995 PCT Pub. No. WO96/06329 PCT Pub. Date Feb. 29, 1996The present invention relates to a magnetic signal detection apparatus utilizing a ferromagnetic thin film magneto-resistive element which produces a maximum output of high linearity with an optimum direction of magnetization of the thin film magneto-resistive element by a small biasing magnetic field. A biasing magnetic field Hb is applied at an angle of approximately 56 DEG to a direction of a current I along a longitudinal direction of a thin film magneto-resistive element (2) on a substrate (1) to make a direction of magnetization M to approximately 45 DEG to attain a highly linear output between power supply terminals (4, 5).